? semiconductor components industries, llc, 2006 june, 2006 ? rev. 3 1 publication order number: MBR20H100CT/d MBR20H100CT, mbrb20h100ct, mbrf20h100ct switchmode ? power rectifier 100 v, 20 a features and benefits ? low forward voltage: 0.64 v @ 125 c ? low power loss/high efficiency ? high surge capacity ? 175 c operating junction temperature ? 20 a total (10 a per diode leg) ? guard?ring for stress protection ? pb?free packages are available applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets ul 94 v?0 @ 0.125 in ? weight (approximately): 1.9 grams (to?220) 1.7 grams (d 2 pak) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds maximum ratings please see the table on the following page to?220ab case 221a style 6 3 4 1 schottky barrier rectifier 20 amperes, 100 volts 1 3 2, 4 2 marking diagrams ayww b20h100g a k a a = assembly location y = year ww = work week b20h100 = device code g = pb?free device aka = polarity designator http://onsemi.com isolated to?220 case 221d style 3 3 1 2 see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information d 2 pak case 418b style 3 3 4 1 2 ay ww b20h100g a k a
MBR20H100CT, mbrb20h100ct, mbrf20h100ct http://onsemi.com 2 maximum ratings (per diode leg) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (rated v r ) t c = 162 c i f(av) 10 a peak repetitive forward current (rated v r , square wave, 20 khz) t c = 160 c i frm 20 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 250 a operating junction temperature (note 1) t j +175 c storage temperature t stg 65 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s controlled avalanche energy (see test conditions in figures 11 and 12) w aval 200 mj esd ratings: machine model = c human body model = 3b > 400 > 8000 v thermal characteristics maximum thermal resistance (MBR20H100CT and mbrb20h100ct) ? junction?to?case ? junction?to?ambient (mbrf20h100ct) ? junction?to?case r jc r ja r jc 2.0 60 2.5 c/w electrical characteristics (per diode leg) maximum instantaneous forward voltage (note 2) (i f = 10 a, t c = 25 c) (i f = 10 a, t c = 125 c) (i f = 20 a, t c = 25 c) (i f = 20 a, t c = 125 c) v f 0.77 0.64 0.88 0.73 v maximum instantaneous reverse current (note 2) (rated dc voltage, t c = 125 c) (rated dc voltage, t c = 25 c) i r 6.0 0.0045 ma stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction?to?ambient: dp d /dt j < 1/r ja . 2. pulse test: pulse width = 300 s, duty cycle 2.0%. device ordering information device order number package type shipping ? MBR20H100CT to?220 50 units / rail MBR20H100CTg to?220 (pb?free) 50 units / rail mbrf20h100ctg to?220fp (pb?free) 50 units / rail mbrb20h100ctt4g d 2 pak (pb?free) 800 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
MBR20H100CT, mbrb20h100ct, mbrf20h100ct http://onsemi.com 3 i f , instantaneous forward current (amps) figure 1. typical forward voltage figure 2. maximum forward voltage v f , instantaneous forward voltage (volts) 100 1 0.1 0.4 0 0.2 1.0 t j = 150 c t j = 25 c 0.8 0.6 i r , maximum reverse current (amps) i r , reverse current (amps) figure 3. typical reverse current figure 4. maximum reverse current 20 0 v r , reverse voltage (volts) 1.0e?01 1.0e?02 1.0e?03 1.0e?06 1.0e?08 40 t j = 125 c t j = 150 c t j = 25 c i f , average forward current (amps) figure 5. current derating t c , case temperature ( c) 120 110 10 5 0 140 150 130 160 square wave dc p fo , average power dissipation (watts) 15 0 i o , average forward current (amps) 16 2 0 510 square figure 6. forward power dissipation 10 1.2 10 t j = 125 c 60 80 100 1.0e?07 1.0e?05 1.0e?04 20 0 v r , reverse voltage (volts) 1.0e?01 1.0e?02 1.0e?03 1.0e?06 1.0e?08 40 t j = 125 c t j = 150 c t j = 25 c 60 80 10 0 1.0e?07 1.0e?05 1.0e?04 170 180 100 i f , instantaneous forward current (amps ) v f , instantaneous forward voltage (volts) 100 1 0.1 0.4 0 0.2 1.0 t j = 150 c t j = 25 c 0.8 0.6 1.2 10 t j = 125 c 4 6 8 12 14 dc 20 15 25 20
MBR20H100CT, mbrb20h100ct, mbrf20h100ct http://onsemi.com 4 c, capacitance (pf) 0 v r , reverse voltage (volts) 100 10 40 80 t j = 25 c figure 7. capacitance 100 20 60 10000 1000 r(t), transient thermal resistance figure 8. thermal response junction?to?ambient for MBR20H100CT and mbrb20h100ct 100 0 0.1 0.00001 t 1 , time (sec) 1 0.0001 0.001 0.01 1 10 100 0.000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t), transient thermal resistance figure 9. thermal response junction?to?case for MBR20H100CT and mbrb20h100ct 100 0 0.1 0.00001 t 1 , time (sec) 10 0.01 0.0001 0.001 0.01 1 10 100 0.000001 0.1 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.01
MBR20H100CT, mbrb20h100ct, mbrf20h100ct http://onsemi.com 5 r(t), transient thermal resistance figure 10. thermal response junction?to?case for mbrf20h100ct 100 0 0.1 0.00001 t 1 , time (sec) 0.1 0.0001 0.001 0.01 1 10 100 0.000001 0.01 1 10 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.001 mercury switch v d i d dut 10 mh coil +v dd i l s 1 bv dut i l i d v dd t 0 t 1 t 2 t figure 11. test circuit figure 12. current?voltage waveforms the unclamped inductive switching circuit shown in figure 11 was used to demonstrate the controlled avalanche capability of this device. a mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. when s 1 is closed at t 0 the current in the inductor i l ramps up linearly; and energy is stored in the coil. at t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt ef fects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at bv dut and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2 . by solving the loop equation at the point in time when s 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the v dd power supply while the diode is in breakdown (from t 1 to t 2 ) minus any losses due to finite component resistances. assuming the component resistive elements are small equation (1) approximates the total energy transferred to the diode. it can be seen from this equation that if the v dd voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when s 1 was closed, equation (2). w aval 1 2 li 2 lpk bv dut bv dut ?v dd w aval 1 2 li 2 lpk equation (1): equation (2):
MBR20H100CT, mbrb20h100ct, mbrf20h100ct http://onsemi.com 6 package dimensions seating plane s g d ?t? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ?b? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b?01 thru 418b?03 obsolete, new standard 418b?04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w?w view w?w view w?w 123 d 2 pak 3 case 418b?04 issue j style 3: pin 1. anode 2. cathode 3. anode 4. cathode *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 0.33 1.016 0.04 17.02 0.67 10.66 0.42 3.05 0.12 5.08 0.20 mm inches scale 3:1
MBR20H100CT, mbrb20h100ct, mbrf20h100ct http://onsemi.com 7 package dimensions to?220 plastic case 221a?09 issue ab style 6: pin 1. anode 2. cathode 3. anode 4. cathode notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.020 0.055 0.508 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j to?220 fullpak case 221d?03 issue g style 3: pin 1. anode 2. cathode 3. anode ?b? ?y? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane ?t? u c s j r dim a min max min max millimeters 0.625 0.635 15.88 16.12 inches b 0.408 0.418 10.37 10.63 c 0.180 0.190 4.57 4.83 d 0.026 0.031 0.65 0.78 f 0.116 0.119 2.95 3.02 g 0.100 bsc 2.54 bsc h 0.125 0.135 3.18 3.43 j 0.018 0.025 0.45 0.63 k 0.530 0.540 13.47 13.73 l 0.048 0.053 1.23 1.36 n 0.200 bsc 5.08 bsc q 0.124 0.128 3.15 3.25 r 0.099 0.103 2.51 2.62 s 0.101 0.113 2.57 2.87 u 0.238 0.258 6.06 6.56 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d?01 thru 221d?02 obsolete, new standard 221d?03. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 MBR20H100CT/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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